View LMH6644MAXEP_3461667.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic low power, 130mhz, 75ma rail-to-rail output amplifiers general description the lmh664xep family true single supply voltage feedback amplifiers offer high speed (130mhz), low distortion (?62dbc), and exceptionally high output current (approxi- mately 75ma) at low cost and with reduced power consump- tion when compared against existing devices with similar performance. input common mode voltage range extends to 0.5v below v ? and 1v from v + . output voltage range extends to within 40mv of either supply rail, allowing wide dynamic range especially desirable in low voltage applications. the output stage is capable of approximately 75ma in order to drive heavy loads. fast output slew rate (130v/s) ensures large peak-to-peak output swings can be maintained even at higher speeds, resulting in exceptional full power bandwidth of 40mhz with a 3v supply. these characteristics, along with low cost, are ideal features for a multitude of industrial and commercial applications. careful attention has been paid to ensure device stability under all operating voltages and modes. the result is a very well behaved frequency response characteristic (0.1db gain flatness up the 12mhz under 150 ? load and a v = +2) with minimal peaking (typically 2db maximum) for any gain set- ting and under both heavy and light loads. this along with fast settling time (68ns) and low distortion allows the device to operate well in adc buffer, and high frequency filter applications as well as other applications. this device family offers professional quality video perfor- mance with low dg (0.01%) and dp (0.01?) characteristics. differential gain and differential phase characteristics are also well maintained under heavy loads (150 ? ) and through- out the output voltage range. the lmh664xep family is offered in single (lmh6642ep), dual (lmh6643ep), and quad (lmh6644ep) options. see ordering information for packages offered. enhanced plastic extended temperature performance of ?40?c to +85?c baseline control - single fab & assembly site process change notification (pcn) qualification & reliability data solder (pbsn) lead finish is standard enhanced diminishing manufacturing sources (dms) support features (v s = 5v, t a = 25?c, r l =2k ? ,a v = +1. typical values unless specified). n ?3db bw (a v = +1) 130mhz n supply voltage range 2.7v to 12.8v n slew rate (note 11), (a v = ?1) 130v/s n supply current (no load) 2.7ma/amp n output short circuit current +115ma/?145ma n linear output current 75ma n input common mode volt. 0.5v beyond v ? , 1v from v + n output voltage swing 40mv from rails n input voltage noise (100khz) 17nv/ n input current noise (100khz) 0.9pa/ n thd (5mhz, r l =2k ? ,v o =2v pp ,a v = +2) ?62dbc n settling time 68ns n fully characterized for 3v, 5v, and 5v n overdrive recovery 100ns n output short circuit protected (note 14) n no output phase reversal with cmvr exceeded applications n selected military applications n selected avionics applications ordering information part number vid part number ns package number (note 3) lmh6642mfxep v62/04625-01 mf05a lmh6643maxep v62/04625-02 m08a LMH6644MAXEP v62/04625-03 m14a (notes 1, 2) tbd tbd note 1: for the following (enhanced plastic) versions, check for availability: lmh6642maep, lmh6642maxep, lmh6642mfep, lmh6643maep, lmh6643mmep, lmh6643mmxep, lmh6644maep, lmh6644mtep, lmh6644mtxep. parts listed with an "x" are provided in tape & reel and parts without an "x" are in rails. note 2: for additional ordering and product information, please visit the enhanced plastic web site at: www.national.com/ mil note 3: refer to package details under physical dimensions july 2004 lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic low power, 130mhz, 75ma rail-to-rail output amplifiers ? 2004 national semiconductor corporation ds200894 www.national.com
absolute maximum ratings (note 4) if military/aerospace specified devices are required, please contact the national semiconductor sales office/ distributors for availability and specifications. esd tolerance 2kv (note 5) 200v (note 12) v in differential 2.5v output short circuit duration (note 6), (note 14) supply voltage (v + -v ? ) 13.5v voltage at input/output pins v + +0.8v, v ? ?0.8v input current 10ma storage temperature range ?65?c to +150?c junction temperature (note 7) +150?c soldering information infrared or convection reflow(20 sec) 235?c wave soldering lead temp.(10 sec) 260?c operating ratings (note 4) supply voltage (v + ?v ? ) 2.7v to 12.8v junction temperature range (note 7) ?40?c to +85?c package thermal resistance (note 7) ( ja ) sot23-5 265?c/w soic-8 190?c/w msop-8 235?c/w soic-14 145?c/w tssop-14 155?c/w 3v electrical characteristics unless otherwise specified, all limits guaranteed for at t j = 25?c, v + = 3v, v ? = 0v, v cm =v o =v + /2, and r l =2k ? to v + /2. boldface limits apply at the temperature extremes. symbol parameter conditions min (note 9) typ (note 8) max (note 9) units bw ?3db bw a v = +1, v out = 200mv pp 80 115 mhz a v = +2, ?1, v out = 200mv pp 46 bw 0.1db 0.1db gain flatness a v = +2, r l = 150 ? to v+/2, r l = 402 ? ,v out = 200mv pp 19 mhz pbw full power bandwidth a v = +1, ?1db, v out =1v pp 40 mhz e n input-referred voltage noise f = 100khz 17 nv/ f = 1khz 48 i n input-referred current noise f = 100khz 0.90 pa/ f = 1khz 3.3 thd total harmonic distortion f = 5mhz, v o =2v pp ,a v = ?1, r l = 100 ? to v + /2 ?48 dbc dg differential gain v cm = 1v, ntsc, a v =+2 r l =150 ? to v + /2 0.17 % r l =1k ? to v + /2 0.03 dp differential phase v cm = 1v, ntsc, a v =+2 r l =150 ? to v + /2 0.05 deg r l =1k ? to v + /2 0.03 ct rej. cross-talk rejection f = 5mhz, receiver: r f =r g = 510 ? ,a v =+2 47 db t s settling time v o =2v pp , 0.1%, 8pf load, v s =5v 68 ns sr slew rate (note 11) a v = ?1, v i =2v pp 90 120 v/s v os input offset voltage 1 5 7 mv tc v os input offset average drift (note 15) 5 v/?c i b input bias current (note 10) ?1.50 ?2.60 ?3.25 a i os input offset current 20 800 1000 na r in common mode input resistance 3m ? c in common mode input capacitance 2pf lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 2
3v electrical characteristics (continued) unless otherwise specified, all limits guaranteed for at t j = 25?c, v + = 3v, v ? = 0v, v cm =v o =v + /2, and r l =2k ? to v + /2. boldface limits apply at the temperature extremes. symbol parameter conditions min (note 9) typ (note 8) max (note 9) units cmvr input common-mode voltage range cmrr 50db ?0.5 ?0.2 ?0.1 v 1.8 1.6 2.0 cmrr common mode rejection ratio v cm stepped from 0v to 1.5v 72 95 db a vol large signal voltage gain v o = 0.5v to 2.5v r l =2k ? to v + /2 80 75 96 db v o = 0.5v to 2.5v r l = 150 ? to v + /2 74 70 82 v o output swing high r l =2k ? to v + /2, v id = 200mv 2.90 2.98 v r l = 150 ? to v + /2, v id = 200mv 2.80 2.93 output swing low r l =2k ? to v + /2, v id = ?200mv 25 75 mv r l = 150 ? to v + /2, v id = ?200mv 75 150 i sc output short circuit current sourcing to v + /2 v id = 200mv (note 13) 50 35 95 ma sinking to v + /2 v id = ?200mv (note 13) 55 40 110 i out output current v out = 0.5v from either supply 65 ma +psrr positive power supply rejection ratio v + = 3.0v to 3.5v, v cm = 1.5v 75 85 db i s supply current (per channel) no load 2.70 4.00 4.50 ma 5v electrical characteristics unless otherwise specified, all limits guaranteed for at t j = 25?c, v + = 5v, v ? = 0v, v cm =v o =v + /2, and r l =2k ? to v + /2. boldface limits apply at the temperature extremes. symbol parameter conditions min (note 9) typ (note 8) max (note 9) units bw ?3db bw a v = +1, v out = 200mv pp 90 120 mhz a v = +2, ?1, v out = 200mv pp 46 bw 0.1db 0.1db gain flatness a v = +2, r l = 150 ? to v+/2, r f = 402 ? ,v out = 200mv pp 15 mhz pbw full power bandwidth a v = +1, ?1db, v out =2v pp 22 mhz e n input-referred voltage noise f = 100khz 17 nv/ f = 1khz 48 i n input-referred current noise f = 100khz 0.90 pa/ f = 1khz 3.3 thd total harmonic distortion f = 5mhz, v o =2v pp ,a v = +2 ?60 dbc dg differential gain ntsc, a v =+2 r l =150 ? to v + /2 0.16 % r l =1k ? to v + /2 0.05 dp differential phase ntsc, a v =+2 r l =150 ? to v + /2 0.05 deg r l =1k ? to v + /2 0.01 ct rej. cross-talk rejection f = 5mhz, receiver: r f =r g = 510 ? ,a v =+2 47 db t s settling time v o =2v pp , 0.1%, 8pf load 68 ns lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 3
5v electrical characteristics (continued) unless otherwise specified, all limits guaranteed for at t j = 25?c, v + = 5v, v ? = 0v, v cm =v o =v + /2, and r l =2k ? to v + /2. boldface limits apply at the temperature extremes. symbol parameter conditions min (note 9) typ (note 8) max (note 9) units sr slew rate (note 11) a v = ?1, v i =2v pp 95 125 v/s v os input offset voltage 1 5 7 mv tc v os input offset average drift (note 15) 5 v/?c i b input bias current (note 10) ?1.70 ?2.60 ?3.25 a i os input offset current 20 800 1000 na r in common mode input resistance 3 m ? c in common mode input capacitance 2 pf cmvr input common-mode voltage range cmrr 50db ?0.5 ?0.2 ?0.1 v 3.8 3.6 4.0 cmrr common mode rejection ratio v cm stepped from 0v to 3.5v 72 95 db a vol large signal voltage gain v o = 0.5v to 4.50v r l =2k ? to v + /2 86 82 98 db v o = 0.5v to 4.25v r l = 150 ? to v + /2 76 72 82 v o output swing high r l =2k ? to v + /2, v id = 200mv 4.90 4.98 v r l = 150 ? to v + /2, v id = 200mv 4.65 4.90 output swing low r l =2k ? to v + /2, v id = ?200mv 25 100 mv r l = 150 ? to v + /2, v id = ?200mv 100 150 i sc output short circuit current sourcing to v + /2 v id = 200mv (note 13) 55 40 115 ma sinking to v + /2 v id = ?200mv (note 13) 70 55 140 i out output current v o = 0.5v from either supply 70 ma +psrr positive power supply rejection ratio v + = 4.0v to 6v 79 90 db i s supply current (per channel) no load 2.70 4.25 5.00 ma 5v electrical characteristics unless otherwise specified, all limits guaranteed for at t j = 25?c, v + = 5v, v ? = ?5v, v cm =v o = 0v and r l =2k ? to ground. boldface limits apply at the temperature extremes. symbol parameter conditions min (note 9) typ (note 8) max (note 9) units bw ?3db bw a v = +1, v out = 200mv pp 95 130 mhz a v = +2, ?1, v out = 200mv pp 46 bw 0.1db 0.1db gain flatness a v = +2, r l = 150 ? to v+/2, r f = 806 ? ,v out = 200mv pp 12 mhz pbw full power bandwidth a v = +1, ?1db, v out =2v pp 24 mhz e n input-referred voltage noise f = 100khz 17 nv/ f = 1khz 48 lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 4
5v electrical characteristics (continued) unless otherwise specified, all limits guaranteed for at t j = 25?c, v + = 5v, v ? = ?5v, v cm =v o = 0v and r l =2k ? to ground. boldface limits apply at the temperature extremes. symbol parameter conditions min (note 9) typ (note 8) max (note 9) units i n input-referred current noise f = 100khz 0.90 pa/ f = 1khz 3.3 thd total harmonic distortion f = 5mhz, v o =2v pp ,a v = +2 ?62 dbc dg differential gain ntsc, a v =+2 r l =150 ? to v + /2 0.15 % r l =1k ? to v + /2 0.01 dp differential phase ntsc, a v =+2 r l =150 ? to v + /2 0.04 deg r l =1k ? to v + /2 0.01 ct rej. cross-talk rejection f = 5mhz, receiver: r f =r g = 510 ? ,a v =+2 47 db t s settling time v o =2v pp , 0.1%, 8pf load, v s =5v 68 ns sr slew rate (note 11) a v = ?1, v i =2v pp 100 135 v/s v os input offset voltage 1 5 7 mv tc v os input offset average drift (note 15) 5 v/?c i b input bias current (note 10) ?1.60 ?2.60 ?3.25 a i os input offset current 20 800 1000 na r in common mode input resistance 3 m ? c in common mode input capacitance 2 pf cmvr input common-mode voltage range cmrr 50db ?5.5 ?5.2 ?5.1 v 3.8 3.6 4.0 cmrr common mode rejection ratio v cm stepped from ?5v to 3.5v 74 95 db a vol large signal voltage gain v o = ?4.5v to 4.5v, r l =2k ? 88 84 96 db v o = ?4.0v to 4.0v, r l = 150 ? 78 74 82 v o output swing high r l =2k ? ,v id = 200mv 4.90 4.96 v r l = 150 ? ,v id = 200mv 4.65 4.80 output swing low r l =2k ? ,v id = ?200mv ?4.96 ?4.90 v r l = 150 ? ,v id = ?200mv ?4.80 ?4.65 i sc output short circuit current sourcing to ground v id = 200mv (note 13) 60 35 115 ma sinking to ground v id = ?200mv (note 13) 85 65 145 i out output current v o = 0.5v from either supply 75 ma psrr power supply rejection ratio (v + ,v ? ) = (4.5v, ?4.5v) to (5.5v, ?5.5v) 78 90 db i s supply current (per channel) no load 2.70 4.50 5.50 ma lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 5
5v electrical characteristics (continued) note 4: absolute maximum ratings indicate limits beyond which damage to the device may occur. operating ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. for guaranteed specifications and the test conditions, see the electrical ch aracteristics. note 5: human body model, 1.5k ? in series with 100pf. note 6: applies to both single-supply and split-supply operation. continuous short circuit operation at elevated ambient temperature can result in exceed ing the maximum allowed junction temperature of 150?c. note 7: the maximum power dissipation is a function of t j(max) , ja , and t a . the maximum allowable power dissipation at any ambient temperature is p d =(t j(max) -t a )/ ja . all numbers apply for packages soldered directly onto a pc board. note 8: typical values represent the most likely parametric norm. note 9: all limits are guaranteed by testing or statistical analysis. note 10: positive current corresponds to current flowing into the device. note 11: slew rate is the average of the rising and falling slew rates. note 12: machine model, 0 ? in series with 200pf. note 13: short circuit test is a momentary test. see note 14. note 14: output short circuit duration is infinite for v s < 6v at room temperature and below. for v s > 6v, allowable short circuit duration is 1.5ms. note 15: offset voltage average drift determined by dividing the change in v os at temperature extremes by the total temperature change. connection diagrams sot23-5 (lmh6642) soic-8 (lmh6642) soic-8 and msop-8 (lmh6643) 20089461 top view 20089462 top view 20089463 top view soic-14 and tssop-14 (lmh6644) 20089468 top view lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 6
typical performance characteristics at t j = 25?c, v + = +5, v ? = ?5v, r f =r l =2k ? . unless oth- erwise specified. closed loop frequency response for various supplies closed loop gain vs. frequency for various gain 20089457 20089451 closed loop gain vs. frequency for various gain closed loop frequency response for various temperature 20089435 20089450 closed loop gain vs. frequency for various supplies closed loop frequency response for various temperature 20089448 20089434 lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 7
typical performance characteristics at t j = 25?c, v + = +5, v ? = ?5v, r f =r l =2k ? . unless otherwise specified. (continued) large signal frequency response closed loop small signal frequency response for various supplies 20089447 20089446 closed loop frequency response for various supplies 0.1db gain flatness for various supplies 20089444 20089445 v out (v pp ) for thd < 0.5% v out (v pp ) for thd < 0.5% 20089409 20089408 lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 8
typical performance characteristics at t j = 25?c, v + = +5, v ? = ?5v, r f =r l =2k ? . unless otherwise specified. (continued) v out (v pp ) for thd < 0.5% open loop gain/phase for various temperature 20089410 20089432 open loop gain/phase for various temperature hd2 (dbc) vs. output swing 20089433 20089414 hd3 (dbc) vs. output swing hd2 vs. output swing 20089415 20089404 lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 9
typical performance characteristics at t j = 25?c, v + = +5, v ? = ?5v, r f =r l =2k ? . unless otherwise specified. (continued) hd3 vs. output swing thd (dbc) vs. output swing 20089405 20089406 settling time vs. input step amplitude (output slew and settle time) input noise vs. frequency 20089413 20089412 v out from v + vs. i source v out from v ? vs. i sink 20089418 20089419 lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 10
typical performance characteristics at t j = 25?c, v + = +5, v ? = ?5v, r f =r l =2k ? . unless otherwise specified. (continued) v out from v + vs. i source v out from v ? vs. i sink 20089416 20089417 swing vs. v s short circuit current (to v s /2) vs. v s 20089429 20089431 output sinking saturation voltage vs. i out output sourcing saturation voltage vs. i out 20089420 20089401 lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 11
typical performance characteristics at t j = 25?c, v + = +5, v ? = ?5v, r f =r l =2k ? . unless otherwise specified. (continued) closed loop output impedance vs. frequency a v = +1 psrr vs. frequency 20089402 20089403 cmrr vs. frequency crosstalk rejection vs. frequency (output to output) 20089407 20089411 v os vs. v out (typical unit) v os vs. v cm (typical unit) 20089430 20089427 lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 12
typical performance characteristics at t j = 25?c, v + = +5, v ? = ?5v, r f =r l =2k ? . unless otherwise specified. (continued) v os vs. v s (for 3 representative units) v os vs. v s (for 3 representative units) 20089422 20089423 v os vs. v s (for 3 representative units) i b vs. v s 20089424 20089425 i os vs. v s i s vs. v cm 20089426 20089428 lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 13
typical performance characteristics at t j = 25?c, v + = +5, v ? = ?5v, r f =r l =2k ? . unless otherwise specified. (continued) i s vs. v s small signal step response 20089421 20089453 large signal step response large signal step response 20089441 20089439 small signal step response small signal step response 20089456 20089436 lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 14
typical performance characteristics at t j = 25?c, v + = +5, v ? = ?5v, r f =r l =2k ? . unless otherwise specified. (continued) small signal step response small signal step response 20089452 20089438 large signal step response large signal step response 20089437 20089454 large signal step response 20089460 lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 15
application notes circuit description the lmh664xep family is based on national semiconduc- tor?s proprietary vip10 dielectrically isolated bipolar process. this device family architecture features the following: complimentary bipolar devices with exceptionally high f t ( 8ghz) even under low supply voltage (2.7v) and low bias current. a class a-b ?turn-around? stage with improved noise, offset, and reduced power dissipation compared to simi- lar speed devices (patent pending). common emitter push-push output stage capable of 75ma output current (at 0.5v from the supply rails) while consuming only 2.7ma of total supply current per chan- nel. this architecture allows output to reach within milli- volts of either supply rail. consistent performance from any supply voltage (3v- 10v) with little variation with supply voltage for the most important specifications (e.g. bw, sr, i out , etc.) significant power saving ( 40%) compared to competi- tive devices on the market with similar performance. application hints this op amp family is a drop-in replacement for the ad805x family of high speed op amps in most applications. in addi- tion, the lmh664xep will typically save about 40% on power dissipation, due to lower supply current, when compared to competition. all ad805x family?s guaranteed parameters are included in the list of lmh664xep guaranteed specifications in order to ensure equal or better level of performance. however, as in most high performance parts, due to subtle- ties of applications, it is strongly recommended that the performance of the part to be evaluated is tested under actual operating conditions to ensure full compliance to all specifications. with 3v supplies and a common mode input voltage range that extends 0.5v below v ? , the lmh664xep find applica- tions in low voltage/low power applications. even with 3v supplies, the ?3db bw ( @ a v = +1) is typically 115mhz with a tested limit of 80mhz. production testing guarantees that process variations with not compromise speed. high fre- quency response is exceptionally stable confining the typical -3db bw over the industrial temperature range to 2.5%. as can be seen from the typical performance plots, the lmh664xep output current capability ( 75ma) is enhanced compared to ad805x. this enhancement, increases the output load range, adding to the lmh664xep?s versatility. because of the lmh664xep?s high output current capability attention should be given to device junction temperature in order not to exceed the absolute maximum rating. this device family was designed to avoid output phase reversal. with input overdrive, the output is kept near supply rail (or as closed to it as mandated by the closed loop gain setting and the input voltage). see figure 1 : however, if the input voltage range of ?0.5v to 1v from v + is exceeded by more than a diode drop, the internal esd protection diodes will start to conduct.the current in the diodes should be kept at or below 10ma. output overdrive recovery time is less than 100ns as can be seen from figure 2 plot: 20089442 figure 1. input and output shown with cmvr exceeded 20089443 figure 2. overload recovery waveform lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 16
application notes (continued) single supply, low power photodiode amplifier the circuit shown in figure 3 is used to amplify the current from a photo-diode into a voltage output. in this circuit, the emphasis is on achieving high bandwidth and the transim- pedance gain setting is kept relatively low. because of its high slew rate limit and high speed, the lmh664xep family lends itself well to such an application. this circuit achieves approximately 1v/ma of transimped- ance gain and capable of handling up to 1ma pp from the photodiode. q1, in a common base configuration, isolates the high capacitance of the photodiode (c d ) from the op amp input in order to maximize speed. input is ac coupled through c1 to ease biasing and allow single supply opera- tion. with 5v single supply, the device input/output is shifted to near half supply using a voltage divider from v cc . note that q1 collector does not have any voltage swing and the miller effect is minimized. d1, tied to q1 base, is for tem- perature compensation of q1?s bias point. q1 collector cur- rent was set to be large enough to handle the peak-to-peak photodiode excitation and not too large to shift the u1 output too far from mid-supply. no matter how low an r f is selected, there is a need for c f in order to stabilize the circuit. the reason for this is that the op amp input capacitance and q1 equivalent collector capaci- tance together (c in ) will cause additional phase shift to the signal fed back to the inverting node. c f will function as a zero in the feedback path counter-acting the effect of the c in and acting to stabilized the circuit. by proper selection of c f such that the op amp open loop gain is equal to the inverse of the feedback factor at that frequency, the response is optimized with a theoretical 45? phase margin. (1) where gbwp is the gain bandwidth product of the op amp optimized as such, the i-v converter will have a theoretical pole, f p , at: (2) with op amp input capacitance of 3pf and an estimate for q1 output capacitance of about 3pf as well, c in = 6pf. from the typical performance plots, lmh6642ep/6643ep family gbwp is approximately 57mhz. therefore, with r f = 1k, from equation 1 and 2 above. c f = 4.1pf, and f p = 39mhz 20089464 figure 3. single supply photodiode i-v converter lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 17
application notes (continued) for this example, optimum c f was empirically determined to be around 5pf. this time domain response is shown in figure 4 below showing about 9ns rise/fall times, corre- sponding to about 39mhz for f p . the overall supply current from the +5v supply is around 5ma with no load. printed circuit board layout and component values sections generally, a good high frequency layout will keep power supply and ground traces away from the inverting input and output pins. parasitic capacitances on these nodes to ground will cause frequency response peaking and possible circuit oscillations (see application note oa-15 for more information). national semiconductor suggests the following evaluation boards as a guide for high frequency layout and as an aid in device testing and characterization: device package evaluation board pn lmh6642mf sot23-5 clc730068 lmh6642mf 8-pin soic clc730027 lmh6643ma 8-pin soic clc730036 lmh6643ma 8-pin msop clc730123 lmh6644ma 14-pin soic clc730031 lmh6644ma 14-pin tssop clc730131 these free evaluation boards are shipped when a device sample request is placed with national semiconductor. another important parameter in working with high speed/ high performance amplifiers, is the component values selec- tion. choosing external resistors that are large in value will effect the closed loop behavior of the stage because of the interaction of these resistors with parasitic capacitances. these capacitors could be inherent to the device or a by- product of the board layout and component placement. ei- ther way, keeping the resistor values lower, will diminish this interaction to a large extent. on the other hand, choosing very low value resistors could load down nodes and will contribute to higher overall power dissipation. 20089465 figure 4. converter step response (1v pp , 20 ns/div) lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 18
physical dimensions inches (millimeters) unless otherwise noted 5-pin sot23 ns package number mf05a 8-pin soic ns package number m08a lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 19
physical dimensions inches (millimeters) unless otherwise noted (continued) 8-pin msop ns package number mua08a 14-pin soic ns package number m14a lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic www.national.com 20
physical dimensions inches (millimeters) unless otherwise noted (continued) 14-pin tssop ns package number mtc14 life support policy national?s products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of national semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. banned substance compliance national semiconductor certifies that the products and packing materials meet the provisions of the customer products stewardship specification (csp-9-111c2) and the banned substances and materials of interest specification (csp-9-111s2) and contain no ??banned substances?? as defined in csp-9-111s2. national semiconductor americas customer support center email: new.feedback@nsc.com tel: 1-800-272-9959 national semiconductor europe customer support center fax: +49 (0) 180-530 85 86 email: europe.support@nsc.com deutsch tel: +49 (0) 69 9508 6208 english tel: +44 (0) 870 24 0 2171 fran?ais tel: +33 (0) 1 41 91 8790 national semiconductor asia pacific customer support center email: ap.support@nsc.com national semiconductor japan customer support center fax: 81-3-5639-7507 email: jpn.feedback@nsc.com tel: 81-3-5639-7560 www.national.com lmh6642ep/lmh6643ep/lmh6644ep enhanced plastic low power, 130mhz, 75ma rail-to-rail output amplifiers national does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and national reserves the righ t at any time without notice to change said circuitry and specifications.

▲Up To Search▲

Price & Availability of LMH6644MAXEP

	To Download LMH6644MAXEP Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .